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Deep UV laser induced luminescence in oxide thin films

: Heber, J.; Muhlig, C.; Triebel, W.; Danz, N.; Thielsch, R.; Kaiser, N.


Applied physics. A A75 (2002), No.5
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396 (Print)
ISSN: 1432-0630 (Online)
Journal Article
Fraunhofer IOF ()
deep UV laser induced luminescence; oxide thin films; time-resolved luminescence; dielectric thin films; Al/sub 2/O/sub 3/ coatings; oxygen- defect centers; strong single-photon interaction; F center absorption; F/sup +/ center absorption; highly reflective thin-film stacks; color centers; 193 nm

Time-resolved luminescence experiments have been set up in order to study the interaction of 193-nm laser radiation with dielectric thin films. At room temperature, Al/sub 2/O/sub 3/ coatings show photoluminescence upon ArF excimer laser irradiation, with significant intensity contributions besides the known substrate emission. Time- and energy-resolved measurements indicate the presence of oxygen-defect centers in Al/sub 2/O/sub 3/ coatings, which suggests a strong single- photon interaction at 193 nm by F/sup +/ and F center absorption. Measurements on highly reflective thin-film stacks, consisting of quarter-wave Al/sub 2/O/sub 3/ and SiO/sub 2/ layers, indicate similar UV excitations, mainly from color centers of Al/sub 2/O/sub 3/