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  4. Optical bistability in InGaN-based multisection laser diodes
 
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2011
Journal Article
Title

Optical bistability in InGaN-based multisection laser diodes

Abstract
Optical bistability is observed in cw-operating InGaN-based laser diodes including a saturable absorber (SA) section. The dependence of the light-current hysteresis on the SA section length and reverse bias (V(SA)) has been studied. An analytical approach is developed to estimate the carrier lifetime t(a) in the SA section from the measurements of the hysteresis width, which leads to t(a)=1.9 ns at zero bias. t(a) is found to decrease rapidly for higher reverse biases and a minimum of t(a)=0.4 ns is interpolated for flatband conditions. We explain the dependence of the carrier lifetime on V(SA) via the modification of the quantum-confined Stark effect.
Author(s)
Dorsaz, J.
Boiko, D.L.
Sulmoni, L.
Carlin, J.F.
Scheibenzuber, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schwarz, U.T.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Grandjean, N.
Journal
Applied Physics Letters  
DOI
10.1063/1.3591977
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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