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  4. Self-pulsation at zero absorber bias in GaN-based multisection laser diodes
 
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2011
Journal Article
Title

Self-pulsation at zero absorber bias in GaN-based multisection laser diodes

Abstract
We study the influence of pump current and absorber bias voltage on the pulse width and frequency of sustained pulsation in GaN-based multisection laser diodes. The observed frequencies and pulse widths range from 1.5 to 4.5GHz and 90 to 18 ps, respectively. Negative absorber bias is found to reduce the pulsation frequency and increase the pulse width. This behavior is explained by the tuneability of absorption and charge carrier lifetime in the absorber via the applied bias voltage.
Author(s)
Scheibenzuber, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hornuss, C.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schwarz, U.T.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Sulmoni, L.
Dorsaz, J.
Carlin, J.F.
Grandjean, N.
Journal
Applied physics express  
DOI
10.1143/APEX.4.062702
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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