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Micro/nanoDAC deformation measurement to analyze packaging components response to thermo-mechanical load

: Vogel, D.; Gollhardt, A.; Michel, B.


Courtois, B. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Design, Test, Integration, and Packaging of MEMS/MOEMS 2002 : 6 - 8 May 2002, Cannes, France
Bellingham/Wash.: SPIE, 2002 (SPIE Proceedings Series 4755)
ISBN: 0-8194-4518-5
Design, Test, Integration, and Packaging of MEMS/MOEMS <2002, Cannes>
Conference Paper
Fraunhofer IZM ()
packaging component response; thermo-mechanical load; thermo-mechanical reliability; MEMS; MOEMS; material testing; defect initiation; defect propagation; multilayer structure; material migration; mechanical behaviour; defect development; strain measurement; displacement measurement; moisture induced strain; polymer; crack testing

Thermo-mechanical reliability in advanced electronic, MEMS and MOEMS packaging requires additional material testing approaches. Namely, the necessary understanding of the impact of very local material stressing on component reliability leads to the need of material testing and characterization on microscopic and even on nanoscopic scale. E.g., defect initiation and propagation in multilayer structures applied in electronics, MEMS and MOEMS technology, the influence of material migration to mechanical behavior or defect development in ultra thin silicon dies often are not well understood. A key for micro material testing and characterization is the measurement of strains and displacements inside microscopic regions. Correlation techniques (e.g. microDAC, nanoDAC) are one of the promising tools for that purpose. Their application potentials to micro testing for packaging materials and components is demonstrated in the paper. More in detail approaches to CTE measurement, analysis of moisture induced strains in polymers and crack testing are discussed. Furthermore, it is shown how the method can be used to study the mechanical response of complex micro components to thermo-mechanical loading.