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New methods to calibrate simulation parameters for chemically amplified resists

: Tollkuehn, B.; Erdmann, A.; Kivel, N.; Robertson, S.A.; Kang, D.; Hansen, S.G.; Fumar, P.A.; Tsann, B.C.; Hoppe, W.


Yen, A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Optical microlithography XV. Vol.2 : 5 - 8 March 2002, Santa Clara, USA
Bellingham/Wash.: SPIE, 2002 (SPIE Proceedings Series 4691)
ISBN: 0-8194-4437-5
Conference "Optical Microlithography" <15, 2002, Santa Clara/Calif.>
Conference Paper
Fraunhofer IIS B ( IISB) ()
chemically amplified resist; simulation parameters calibration; predictive process simulation; modeling option; diffusion kinetic reaction coupling; quencher base event sequence; Hinsberg model; diffusion mode; Fickian model; linear diffusion model; development rate model; enhanced notch model; line-width; semidense feature; dense feature; full resist profile; Shipley resist UV 113; parameter extraction procedure; exposure kinetic; acid base neutralization

In this paper we examine new models and the indispensability of model parameters of chemically amplified resists (CAR) for their usage in predictive process simulation. Based on a careful exploration of different modeling options we calibrate the model parameters with different experimental data. Furthermore, we investigate different modeling approaches: (1) Mode of coupling between diffusion and kinetic reactions, sequence of quencher base events (Hinsberg model); (2) Mode of diffusion: Fickian and linear diffusion models; (3) Development rate model: Performance of the Enhanced Notch model. The resulting models are evaluated with respect to their performance by comparing with experimental line-width for semidense (1-2, 1-1.6, 1-1.4, 1-1.2) and dense features, the bias between different features and full resist profiles. The investigations are applied to the Shipley resist UV TM 113. Finally, a parameter extraction procedure for chemically amplified resists is proposed.