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Temperature-dependent photoluminescence measurements on a sub-micrometer length scale on green light emitting InGaN/GaN quantum wells

: Danhof, J.; Vierheilig, C.; Schwarz, U.T.; Meyer, T.; Peter, M.; Hahn, B.


Physica status solidi. B 248 (2011), No.5, pp.1270-1274
ISSN: 0031-8957
ISSN: 0370-1972
Journal Article
Fraunhofer IAF ()
InGaN; quantum wells; photoluminescence

For an InGaN/GaN multiquantum well sample with low threading dislocation density (TDD), temperature-dependent microphotoluminescence measurements were performed. Evaluation of the behavior of the photoluminescence peak energy leads to the conclusion that even at a length scale of about 500?nm we still see the same S-shape of the temperature-dependent energy shift that was observed on a far larger scale. The behavior of the temperature-dependent full width at half maximum of the spectra and the integrated intensity leads to similar conclusions. We therefore demonstrate that the phenomenon responsible for the S-shape acts on a length scale that is far smaller than 500?nm. In addition, the behavior of the integrated intensity shows a fluctuation of local point defect density in the analyzed sample with its low TDD.