Influence of the additives argon, O-2, C4F8, H-2, N-2 and CO on plasma conditions and process results during the etch of SiCOH in CF4 plasma

Reactive ion etch processes for modern interlevel dielectrics become more and more complex, especially for further scaling of interconnect dimensions. The materials will be damaged within such processes with the result of an increase in their dielectric constants. The capability of selected additives to minimize the low-k sidewall damage during reactive ion etching (RIE) of SiCOH materials in fluorocarbon plasmas was shown in different works in the past. Most of the investigated additive gases alter the fluorine to carbon ratio as well as the dissociation of the parent gas inside the etch plasma. The result is a changed etch rate, a modified polymerization behavior and other characteristics of the process induced SiCOH damage. Heavy inert ions like argon will be accelerated to the sample surface in the cathode dark space and enhance therewith the sputter yield on the SiCOH network [1]. In this paper the additives Ar, O-2, C4F8, H-2, N-2 and CO were added to a conventional CF4 etch plasma. We try to provoke different changes in the plasma conditions and therewith in the process results. Contact angle measurements, spectroscopic ellipsometry, Hg-probe analysis, FTIR measurements and SEM cross-sections were used to overview the additive induced modifications. To understand the influences of the additives gases more exactly, changes in the physical and chemical plasma behavior must be analyzed. Therefore quadrupole mass spectrometry (QMS) and quantum cascade laser absorption spectroscopy (QCLAS) were used.