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Field electron emission properties of n-type (111)-oriented single crystal cubic boron nitride

: Yamada, T.; Nebel, C.E.; Taniguchi, T.


Journal of vacuum science and technology B. Microelectronics and nanometer structures 29 (2011), No.2, Art. 02B115, 5 pp.
ISSN: 0734-211X
ISSN: 1071-1023
ISSN: 2166-2746
ISSN: 2166-2754
International Vacuum Nanoelectronics Conference (IVNC) <23, 2010, Palo Alto/Calif.>
Journal Article, Conference Paper
Fraunhofer IAF ()

The authors report the field emission properties of (111)-oriented single crystal n-type semiconducting cubic boron nitride (c-BN). Specifically, c-BN with two different surface conditions was prepared and analyzed. One surface was hydrogen (H) terminated and has negative electron affinity (NEA). The second surface was obtained by annealing in vacuum and has positive electron affinity (PEA). Field emission properties of carbon-reconstructed n-type semiconducting single crystal diamond were also characterized for comparison. The vacuum annealed c-BN surface with PEA showed low threshold voltages compared to the H-terminated NEA surfaces. The internal barrier height of the NEA c-BN surface was estimated to be 3.5 eV, in accordance with the Schottky barrier-lowering model. This internal barrier prevents electrons from approaching the surface. Thus, a higher electric field is required to reduce the internal barrier for field emission. From the Fowler-Nordheim plots, positive electron affinity of vacuum annealed surface was 0.6-0.8 eV, which dominates field emission from vacuum annealed c-BN surface.