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Transient-diffusion effects

Transiente Diffusionseffekte
: Stiebel, D.; Pichler, P.


Applied physics. A 76 (2003), No.7, pp.1041-1048
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396 (Print)
ISSN: 1432-0630 (Online)
Journal Article
Fraunhofer IISB ()
silicon; transient diffusion; self-interstitial cluster; boron-interstitial cluster

Transient effects on diffusion and activation during post-implantation anneals are a major obstacle for the further miniaturization of ultra-large-scale integrated semiconductor devices. The article reviews recent developments in the simu-lation of such phenomena with particular emphasis on models for the kinetics of self-interstitial agglomerates and boron interstitial clusters.