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Firing stable passivation layers for the front and rear side of high efficiency N-type back-contact back-junction solar cells

: Woehl, R.; Mack, S.; Kohn, N.; Preu, R.; Biro, D.

Fulltext urn:nbn:de:0011-n-1594794 (251 KByte PDF)
MD5 Fingerprint: 98d580d4dcdeb41ebb4cf7e0507a761a
Created on: 4.8.2012

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Pilotherstellung von industrienahen Solarzellen; Industrielle und neuartige Solarzellenstrukturen

Front and rear surface passivation layers on n-type Si were analyzed that can be implemented in a high efficiency back-contact back-junction solar cell. The front surface features a phosphorus diffused layer which is passivated with a thin thermal oxide and an antireflection silicon nitride layer. In order to assess the quality of the oxide of the newly developed oxidation processes of the Photovoltaic Technology Evaluation Center (PV-TEC), they were compared to the thin oxide films fabricated at the clean room. For the rear side, different passivation layers and stacks were compared to each other. In addition to the firing stability, the spiking behavior of aluminum paste was investigated. The lowest surface saturation current densities after firing and annealing reached were J0s,front = 61 fA/cm2 on a textured surface for the front side and J0s,rear = 17 fA/cm2 on a plane surface for the rear side, which results in Voc limit,front = 681 mV and Voc,limit,rear = 714 mV respectively.