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Highly compact and high efficient solar inverter with silicon carbide transistors

 
: Wilhelm, C.; Kranzer, D.; Burger, B.

:

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
pp.4442-4447
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
English
Conference Paper
Fraunhofer ISE ()
Elektrische Energiesysteme; Regenerative Stromversorgung; Leistungselektronik und Regelungstechnik

Abstract
Siliconcarbide (SiC) transistors have a much lower switching energy and lower conduction losses than conventional silicon based IGBTs or MOSFETs. In previous measurements their suitability for the application in PVinverters has been proven. The efficiency could be increased by more than 2 % with SiC-transistors compared to commercially available PV-inverters with silicon transistors [1], [2]. But these semiconductors offer further potential not only by increasing the efficiency, but also by increasing the switching frequency, which helps to reduce the size of the inductive components. This paper will show a possibility how to improve the power density together with the efficiency of a photovoltaic inverter by using silicon carbide transistors.

: http://publica.fraunhofer.de/documents/N-159263.html