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2010
Conference Paper
Titel
Highly compact and high efficient solar inverter with silicon carbide transistors
Abstract
Siliconcarbide (SiC) transistors have a much lower switching energy and lower conduction losses than conventional silicon based IGBTs or MOSFETs. In previous measurements their suitability for the application in PVinverters has been proven. The efficiency could be increased by more than 2 % with SiC-transistors compared to commercially available PV-inverters with silicon transistors [1], [2]. But these semiconductors offer further potential not only by increasing the efficiency, but also by increasing the switching frequency, which helps to reduce the size of the inductive components. This paper will show a possibility how to improve the power density together with the efficiency of a photovoltaic inverter by using silicon carbide transistors.