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Stacks of a-SiCx layers on planar and textured surfaces for the solar cell front side on both n+ and p+-emitters

 
: Steinhauser, B.; Suwito, D.; Janz, S.; Hermle, M.

:
Fulltext urn:nbn:de:0011-n-1592496 (387 KByte PDF)
MD5 Fingerprint: e3e3a46ff5f000720c4afaec8c4fd6f9
Created on: 11.8.2012


European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
pp.2250-2254
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Oberflächen: Konditionierung; Passivierung; Lichteinfang; Herstellung und Analyse von hocheffizienten Solarzellen; Industrielle und neuartige Solarzellenstrukturen; Produktionsanlagen und Prozessentwicklung

Abstract
In this work we present stacks of a-SiCx:H layers for the solar cell front side on highly doped surfaces. The focus is set on single and double layer stacks which effectively reduce the surface recombination of phosphorus emitters. On planer surfaces emitter saturation current densities of J0e < 20 fA/cm2 have been found for stacks combining an intrinsic with a doped passivation layer. A major drawback has been observed when using these passivation stack systems deposited by high-frequency (HF) plasma-enhanced chemical vapor deposition (PECVD) on textured surfaces - the J0e values increase by a factor of 8-10 compared to results obtained on planar surfaces. This issue has been explained by developing a model for the field in the HF plasma near the textured surface and by discussing its influence on the plasma particles and thus on the local composition of the passivation layers. One way to avoid these field effects is to use a microwave (MW) plasma source. Therefore MW-deposited passivation layers have equally been evaluated on planar and textured surfaces. The results are compared to the results of the HFdeposited passivation stacks and the differences are discussed. In addition, the performance of the a-SiCx emitter passivation at solar cell level is investigated. Furthermore, an anti-reflection coating (ARC) by C-rich amorphous silicon carbide is presented and compared to a state-of-the-art SiNx ARC.

: http://publica.fraunhofer.de/documents/N-159249.html