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Title
Detektor und Verfahren zum Detektieren elektromagnetischer Strahlung und Computerprogramm zur Durchfuehrung des Verfahrens
Date Issued
2009
Author(s)
Patent No
102009020218
Abstract
(B3) Ein Detektor zur Detektion elektromagnetischer Strahlung umfasst ein Halbleitersubstrat, das einen ersten Dotierungstyp aufweist und eine Wanne in dem Halbleitersubstrat, wobei die Wanne einen zweiten Dotierungstyp aufweist. Der erste Dotierungstyp und der zweite Dotierungstyp sind verschieden und die Wanne weist in einer Richtung parallel zu einer Oberflaeche des Halbleitersubstrats eine ansteigende Dotierstoffkonzentration auf. Des Weiteren umfasst der Detektor einen Detektoranschlussdotierungsbereich, der zumindestens teilweise in der Wanne in einem Anschlussbereich der Wanne angeordnet ist. Die Detektion der elektromagnetischen Strahlung basiert auf einer Erzeugung von freien Ladungstraegern durch die elektromagnetische Strahlung in einem Detektionsbereich der Wanne. Der Detektionsbereich weist eine maximale Dotierstoffkonzentration auf, die niedriger ist als eine maximale Dotierstoffkonzentration des Anschlussbereichs der Wanne.
US 20100308213 A1 UPAB: 20101221 NOVELTY - Detector (100) comprises: a semiconductor substrate (110) of a first doping type; a well (120) in the substrate, where the well is of a second doping type, the first doping type and the second doping type are different and the well comprises an increasing dopant concentration in a direction parallel to a surface of the substrate; a detector terminal doping region (130) which is arranged at least partly in the well in a terminal region of the well; and transfer and collection control electrodes for controlling a transfer of free charge carriers in a region of the well. DETAILED DESCRIPTION - Detector (100) comprises: a semiconductor substrate (110) of a first doping type; a well (120) in the semiconductor substrate, where the well is of a second doping type, the first doping type and the second doping type are different and the well comprises an increasing dopant concentration or an increasing inherent existing potential gradient in a direction parallel to a surface of a semiconductor substrate; a detector terminal doping region (130) which is arranged at least partly in the well in a terminal region of the well, where the detector terminal doping region is of the same doping type as the well, a detection of electromagnetic radiation is based on a generation of free charge carriers by the electromagnetic radiation in a detection region (124) of the well which comprises a maximum dopant concentration which is lower than a maximum dopant concentration of the terminal region of the well and the dopant concentration or inherent existing potential gradient of the well increases monotonically in the direction parallel to the surface of the semiconductor substrate in a region between one end of the detection region facing away from the terminal region and one end of the terminal region facing away from the detection region; a transfer control electrode for controlling a transfer of free charge carriers in a region of the well, where the transfer control electrode is arranged on the surface of the semiconductor substrate in a region of the well between the detector terminal doping region and the detection region and an electrically insulting layer are arranged between the semiconductor substrate and the transfer control electrode; and a collection control electrode for collecting free charge carriers in a region of the well, where the collection control electrode is arranged on the surface of the semiconductor substrate in a region of the well between the detector terminal doping region and the detection region, an electrically insulating layer is arranged between the semiconductor substrate and the collection control electrode and the transfer control electrode is arranged at least partly between the collection control electrode and the detector terminal doping region. INDEPENDENT CLAIMS are also included for: (1) producing a detector comprising: providing the semiconductor substrate; generating the well; generating the detector terminal doping region; generating the transfer control electrode; and generating the collection control electrode; and (2) detecting electromagnetic radiation comprising: generating free charge carriers by the electromagnetic radiation in the detection region of a well; and collecting the free charges carrier in a detector terminal doping region which is arranged at least partly in the well in the terminal region of the well, where: the detector terminal doping region is of the same doping type as the well and detecting the electromagnetic radiation is based on collecting the free charge carriers; the transfer control electrode is configured for controlling a transfer of free charge carriers in a region of the well; and the collection control electrode is configured for collecting free charge carriers in the region of the well. USE - The detector is useful for detecting electromagnetic radiation (claimed). ADVANTAGE - The detector: is sensitive; reduces the black current flow; has increased response speed and reduced response time; and provides a good signal-to-noise ratio.
Language
de
Patenprio
DE 102009020218 A: 20090507