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Aluminium-doped p+ silicon for rear emitters and back surface fields: Results and potentials of industrial n- and p-type solar cells
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
|European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>|
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
| Conference Paper, Electronic Publication|
|Fraunhofer ISE ()|
We compare identically processed n- and p-type silicon solar cells with each other featuring aluminium-doped p+ regions on the rear made from screen-printed paste and acting as emitter or back surface field, respectively. We investigate near-industrial large-area n+np+ rear junction and n+pp+ front junction cells and discuss three cell concepts with different rear side structures: (i) For solar cells with a full-area non-passivated Al-p+ rear, we demonstrate similar performances on n- and p-type float-zone Si material with efficiencies of 18.6 % and 18.4 %, respectively. For our best n-type cell with a rear Al emitter coverage of 100 %, we have achieved a record-high efficiency of 19.3 %. (ii) For solar cells with a full-area and surface-passivated Al-p+ rear, we have obtained an increase in the open-circuit voltage of 10 mV and in the short-circuit current density of 1.5 mA/cm2. (iii) For solar cells with laser-fired Al-p+ points in the passivated rear Si surface, we havereached an efficiency of 19.6 % for a ptype LFC cell.