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Conductivity mobility and hall mobility in compensated multicrystalline silicon

 
: Schindler, F.; Geilker, J.; Kwapil, W.; Giesecke, J.; Schubert, M.C.; Warta, W.

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Fulltext urn:nbn:de:0011-n-1581704 (315 KByte PDF)
MD5 Fingerprint: 53e3e7b12b1521b8d160081b5b090a1f
Created on: 4.8.2012


European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
pp.2364-2368
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung: Material; Zellen und Module

Abstract
The knowledge of the majority carrier mobility in silicon as a function of dopant density is of utmost importance for a correct quantitative evaluation of a variety of lifetime measurements. However, only for monocrystalline silicon doped with either boron (concentration NA) or phosphorus (concentration ND), sufficient reliable experimental data exists as well as good models. In the presence of both dopants, in so called compensated silicon, a reduced mobility is expected. It seems that the model of Klaassen provides acceptable values for the mobility in lowly compensated monocrystalline silicon as a function of NA + ND [1]. For more strongly compensated monocrystalline silicon and for multicrystalline silicon, it is not sure if this model is still applicable. In this contribution, the conductivity mobility of majority carrier holes as well as the Hall mobility in compensated and non-compensated multicrystalline (mc) p-type silicon is investigated and compared with the established mobility models as well as with the data from monocrystalline silicon.

: http://publica.fraunhofer.de/documents/N-158170.html