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High efficiency p-type PERC solar cells applying PECVD ALOx layers

: Saint-Cast, P.; Benick, J.; Kania, D.; Billot, E.; Richter, A.; Hermle, M.; Hofmann, M.; Rentsch, J.; Preu, R.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-1581663 (200 KByte PDF)
MD5 Fingerprint: 019729b1efbff70807b2efd29c3c037b
Created on: 4.8.2012

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Ultrathin (7 nm) ALD Al2O3 layers and high-deposition-rate PECVD AlOx layers have the potential to become the rear surface passivation for the next generation of p-type silicon industrial solar cells. These passivation layers have been applied on laboratory-scale passivated-emitter-and-rear solar cells. Efficiencies higher than 21 % have been achieved. The illuminated current-voltage measurement and the external quantum efficiency confirm that the rear surfaces are providing a high passivation quality and internal reflectance. Based on this experiment we can conclude that these two technologies have probably very similar potential when applied on solar cells. Consequently it will probably be more the deposition system than the deposition technique that will be the main criteria for the choice of one of the technologies. Finaly PECVD and ALD deposition systems are compared in important criteria for industrial solar cell production.