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P-type Cz-Si PERC-type solar cells applying PECVD aluminium oxide rear surface passivation

: Saint-Cast, P.; Kania, D.; Billot, E.; Weiss, L.; Hofmann, M.; Gautero, L.; Kohn, N.; Biro, D.; Rentsch, J.; Preu, R.

Fulltext urn:nbn:de:0011-n-1581657 (265 KByte PDF)
MD5 Fingerprint: bf75031ebeb2cc4ab065a145223a27ab
Created on: 9.8.2012

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

A high-deposition-rate plasma-enhanced chemical-vapor-deposition (PECVD) technique has been used to deposit high-quality aluminum oxide (AlOx) layers for silicon surface passivation. Effective-carrier-lifetime values over 2 ms have been measured on p-type 1 float-zone silicon wafers symmetrically deposited with PECVD AlOx. This passivation layer has been applied on large-area industrial-type solar cells were the contacts have been obtained using screen printing, cofiring and laser-fired contacts (LFC). A higher open-circuit voltage and a higher short-circuit current density were demonstrated for the rear-passivated solar cells compared to state-of-the-art aluminum-back-surface-field (Al-BSF) solar cells.