Options
2010
Conference Paper
Titel
P-type Cz-Si PERC-type solar cells applying PECVD aluminium oxide rear surface passivation
Abstract
A high-deposition-rate plasma-enhanced chemical-vapor-deposition (PECVD) technique has been used to deposit high-quality aluminum oxide (AlOx) layers for silicon surface passivation. Effective-carrier-lifetime values over 2 ms have been measured on p-type 1 ohm.cm float-zone silicon wafers symmetrically deposited with PECVD AlOx. This passivation layer has been applied on large-area industrial-type solar cells were the contacts have been obtained using screen printing, cofiring and laser-fired contacts (LFC). A higher open-circuit voltage and a higher short-circuit current density were demonstrated for the rear-passivated solar cells compared to state-of-the-art aluminum-back-surface-field (Al-BSF) solar cells.
Author(s)