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Dual-gate GaN MMICs for MM-wave operation

 
: Quay, R.; Tessmann, A.; Kiefer, R.; Maroldt, S.; Haupt, C.; Nowotny, U.; Weber, R.; Massler, H.; Schwantuschke, D.; Seelmann-Eggebert, M.; Leuther, A.; Mikulla, M.; Ambacher, O.

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Fulltext (PDF; )

IEEE microwave and wireless components letters 21 (2011), No.2, pp.95-97
ISSN: 1051-8207
ISSN: 1531-1309
English
Journal Article, Electronic Publication
Fraunhofer IAF ()
field effect transistor; microwave- and millimeter-wave solid-state device; power amplifier; wide bandgap transistors

Abstract
This letter describes the millimeter-wave operation of III-N dual-gate MMICs based on a complete mm-wave MMIC technology suitable for operation up to 110 GHz. The GaN HEMTs have a gate length of 100 nm, yield high maximum transconductance, and very low parasitic capacitances. The cutoff frequency f t is above 80 GHz at an operation bias of 15 V in a fully passivated device. Dual-gate devices were developed for high gain at high gate widths and for substantial improvements in gain per stage on MMIC level. Complete III-N MMICs in grounded coplanar passive technology were designed. A single-stage dual-gate MMIC at 60 GHz yields 150 mW (840 mW/mm) of output power. A second MMIC shows a linear gain of greater than 10 dB at 94 GHz. It further yields an output power of 22.8 dBm (190 mW or 520 mW/mm) in CW-operation to a 50 \'02 load with a maximum PAE of 7% at 94 GHz. The letter demonstrates the advantage of GaN dual-gate devices in power gain over common-source devices while maintaining essential improvements in power density.

: http://publica.fraunhofer.de/documents/N-156958.html