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Comparison of intrinsic amorphous silicon buffer layers for silicon heterojunction solar cells deposited with different PECVD techniques

 
: Pysch, D.; Meinhardt, C.; Ritzau, K.-U.; Bivour, M.; Zimmermann, K.; Schetter, C.; Hermle, M.; Glunz, S.W.

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Fulltext urn:nbn:de:0011-n-1567807 (263 KByte PDF)
MD5 Fingerprint: cce157dbae64fb9da2147f3c6e00630b
Created on: 3.8.2012


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Vol.5 : Honolulu, Hawaii, USA, 20 - 25 June 2010
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-5890-5
ISBN: 978-1-4244-5891-2
ISBN: 978-1-4244-5892-9
pp.3570-3576
Photovoltaic Specialists Conference (PVSC) <35, 2010, Honolulu/Hawaii>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Oberflächen: Konditionierung; Passivierung; Lichteinfang; Herstellung und Analyse von hocheffizienten Solarzellen; Industrielle und neuartige Solarzellenstrukturen

Abstract
In this investigation we compare intrinsic hydrogen diluted amorphous a-Si:H(i) layers deposited by inductively coupled plasma (ICP) to the standard parallel plate (PP) plasma, driven by 13.5 MHz power source. We analyze and compare the growth rate, optical energy gap, homogeneity, passivation quality, and most importantly silicon heterojunction solar cell performance. The ICP a-Si:H(i) layer shows superior properties regarding the growth rate, however, we obtain a slightly better passivation quality with the PP a-Si:H(i) layer, with Voc values up to 723 mV. Looking at the overall solar cell performance we were not able to see any difference between ICP and PP silicon heterojunction solar cell. The best solar cell (with an ICP a-Si:H(i) layer) has an efficiency of 18.7%.

: http://publica.fraunhofer.de/documents/N-156780.html