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Carrier confinement and transport in high band gap materials with embedded Si quantum dots

 
: Löper, P.; Hiller, D.; Künle, M.; Gradmann, R.; Rothfelder, M.; Janz, S.; Hermle, M.; Zacharias, M.; Glunz, S.W.

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Fulltext urn:nbn:de:0011-n-1564508 (503 KByte PDF)
MD5 Fingerprint: 06400434edcb33a73a72ec85e816a006
Created on: 3.8.2012


European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
pp.269-273
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Silicium Quantenpunkte; Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Farbstoff-; Organische und Neuartige Solarzellen; Alternative Photovoltaik-Technologien; Tandemsolarzellen auf kristallinem Silicium; Industrielle und neuartige Solarzellenstrukturen; Neuartige Konzepte

Abstract
Silicon nanocrystals in dielectric matrices are usually produced using plasma enhanced chemical vapour deposition of Si rich Si-based dielectrics and thermal annealing at high (1100°C) temperatures. In this paper, the influence of boron doping and hydrogen dilution on the formation of Si and SiC nanocrystals in a SiC film is investigated. The dark conductivity increases from 5.4·10-8 W-1cm-1 without additional dopant gas to 2.1·10-4 W-1cm-1 with 100 sccm additional B2H6 in H2 for films annealed at 900 °C and further to 1.2·10-3 W-1cm-1 for 1000 °C annealing and 100 sccm dopant gas mixture. Furthermore, IV-curves in dark and under illumination are presented for a superlattice of 4nm Si nanocrystals and 4nm SiO2 barrier layers and are compared to those of SiC layers with Si nanocrystals.

: http://publica.fraunhofer.de/documents/N-156450.html