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High temperature stability of PECVD aluminium oxide layers applied as negatively charged passivation on c-Si surfaces

 
: Kania, D.; Saint-Cast, P.; Hofmann, M.; Rentsch, J.; Preu, R.

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Fulltext urn:nbn:de:0011-n-1564285 (200 KByte PDF)
MD5 Fingerprint: 61306e632f8f3593b354d34097d8c6ee
Created on: 4.8.2012


European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
pp.2292-2296
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Pilotherstellung von industrienahen Solarzellen; Industrielle und neuartige Solarzellenstrukturen

Abstract
Plasma-enhanced chemical vapor deposited (PECVD) aluminum oxide (AlOx) layers were developed using a high-throughput industrial-type inline tool. The layers were investigated in order to receive high passivation quality and thermal stability. With these layers, serving as passivation of low resistivity p-type silicon surfaces, effective lifetimes of 2.3 ms (1 ohm·cm float-zone (FZ) silicon) could be achieved. The influence of different thermal treatments was studied, applying annealing in forming gas (FGA) and firing in a range of 350 °C to 900 °C. Different layer properties were investigated; appearance of blistering on the surface by means of scanning electron microscopy (SEM) measurements, electrical properties such as the fixed negative charge density Qf and the interface trap density Dit within the AlOx layer by means of capacitance-voltage (C-V) measurements. Firing resistant PECVD AlOx layers could be developed that show excellent passivation quality with Qf = -3.1·1012 cm-2 and Dit = 4·1010 cm-2 eV-1. Stack systems with an optional capping layer on top of the AlOx film, consisting of PECVD amorphous hydrogenated silicon nitride (a-SiNx:H), are presented as a solution for industrial screen printed silicon solar cells.

: http://publica.fraunhofer.de/documents/N-156428.html