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n-Type silicon - enabling efficiencies > 20% in industrial production

 
: Glunz, S.W.; Benick, J.; Biro, D.; Bivour, M.; Hermle, M.; Pysch, D.; Rauer, M.; Reichel, C.; Richter, A.; Rüdiger, M.; Schmiga, C.; Suwito, D.; Wolf, A.; Preu, R.

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Fulltext urn:nbn:de:0011-n-1563732 (459 KByte PDF)
MD5 Fingerprint: 141aed0275e2e37ad805ec9d6864ec36
Created on: 9.8.2012


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Vol.1 : Honolulu, Hawaii, USA, 20 - 25 June 2010
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-5890-5
ISBN: 978-1-4244-5891-2
ISBN: 978-1-4244-5892-9
pp.50-56
Photovoltaic Specialists Conference (PVSC) <35, 2010, Honolulu/Hawaii>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen; Industrielle und neuartige Solarzellenstrukturen

Abstract
In the first part of this paper we estimate the efficiency potential of crystalline silicon solar cells on conventionally pulled p-type boron-doped Czochralski-grown silicon with typical oxygen concentrations. Taking into account an industrial high-efficiency cell structure featuring fine-line metallization, shallow and well-passivated emitter and a rear surface structure with dielectric passivation and local laser-fired point contacts, the maximum achievable efficiency is around 20%. The main limitation of such a cell is due to the rather low bulk lifetime after light-induced degradation. Even when avoiding the metastable boron-oxygen defect by using Gallium-doped or magnetic Cz-silicon, it has to be kept in mind that the detrimental impact of metal contaminations on p-type silicon is greater than on n-type silicon. A potential strategy to reduce this loss is the use of n-type silicon. Therefore, the second part of the paper discusses different architectures for solar cells on n-type silicon substrates and shows the latest results achieved at Fraunhofer ISE in this field.

: http://publica.fraunhofer.de/documents/N-156373.html