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SiNTO EWT silicon solar cells

 
: Fallisch, A.; Keding, R.; Kästner, G.; Bartsch, J.; Werner, S.; Stüwe, D.; Specht, J.; Preu, R.; Biro, D.

:
Fulltext urn:nbn:de:0011-n-1563568 (440 KByte PDF)
MD5 Fingerprint: 97c1384526b1704f19311aa64a9cfe94
Created on: 11.8.2012


European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
pp.1991-1996
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Pilotherstellung von industrienahen Solarzellen; Industrielle und neuartige Solarzellenstrukturen

Abstract
In this work we combine the SiNTO cell process with the EWT cell concept. All masking steps are performed by inkjet printing technology. The via-holes and laser-fired contacts are created by high-speed laser drilling. A new polishing process, which is suitable for inkjet masking, to pattern the interdigitated grid on the rear side is developed. For passivation purposes a thermal silicon oxide is used for the rear surface and a silicon nitride antireflection coating for the front surface. An e-gun evaporated aluminium/titanium/silver stack is used for the metallization, where the silver acts as a seed layer for a subsequent electro-plating step. Conversion efficiencies up to 16.9% on FZ material are obtained. The emitter is additionally analyzed on symmetric lifetime samples. Two different emitter diffusion processes, a 35 and a 65 ohm/sq. POCl3 diffusion process are regarded. An emitter diffused from a phosphorus doped silicon oxide layer in the same diffusion process as the 35 ohm/sq. emitter is analyzed as well. Emitter saturation current densities as low as 286 fA/cm2 are reached for an oxidized emitter.

: http://publica.fraunhofer.de/documents/N-156356.html