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n-Type silicon solar cells with amorphous/crystalline silicon heterojunction rear emitter

 
: Bivour, M.; Meinhardt, C.; Pysch, D.; Reichel, C.; Ritzau, K.-U.; Hermle, M.; Glunz, S.W.

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Fulltext urn:nbn:de:0011-n-1563411 (199 KByte PDF)
MD5 Fingerprint: f5bba2ef2264612256e69e4f75beb60d
Created on: 9.8.2012


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Vol.2 : Honolulu, Hawaii, USA, 20 - 25 June 2010
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-5890-5
ISBN: 978-1-4244-5891-2
ISBN: 978-1-4244-5892-9
pp.1304-1308
Photovoltaic Specialists Conference (PVSC) <35, 2010, Honolulu/Hawaii>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Oberflächen: Konditionierung; Passivierung; Lichteinfang; Herstellung und Analyse von hocheffizienten Solarzellen; Industrielle und neuartige Solarzellenstrukturen

Abstract
We present the first silicon solar cells processed at Fraunhofer ISE featuring an amorphous/crystalline silicon heterojunction rear emitter and a diffused front surface field. In this work, we focus on the optimization of the silicon heterojunction rear emitter of n-type silicon solar cells with regards to the intrinsic hydrogenated amorphous silicon a-Si:H(i) and boron-doped hydrogenated amorphous silicon a-Si:H(p) layer thickness and the influence of a transparent conducting oxide layer on the rear emitter surface. Efficiencies up to 19.1% (Voc = 687 mV, Jsc = 34.9 mA/cm2, FF = 79.9%) have been reached for non-textured solar cells on n-type absorbers. Furthermore, we attained an efficiency of 19.8% on textured p-type absorbers featuring an amorphous/crystalline silicon heterojunction rear emitter.

: http://publica.fraunhofer.de/documents/N-156341.html