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2011
Journal Article
Titel
Electron and hole accumulation in InN/InGaN heterostructures
Abstract
For high frequency field effect transistors, one of the promising approaches is to grow a very thin (<=10 nm) InN channel pseudomorphically with low defect density between low lattice mismatched InGaN layers. The present work provides a comprehensive analysis of such structures by varying width of the InN well. Both experimental and theoretical approaches have been applied in order to optimize the InN potential well structure for a transistor operation.
Author(s)