Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Electron and hole accumulation in InN/InGaN heterostructures

 
: Lebedev, V.; Polyakov, V.M.; Knübel, A.; Aidam, R.; Kirste, L.; Cimalla, V.; Granzner, R.; Schwierz, F.; Ambacher, O.

:

Physica status solidi. C 8 (2011), No.2, pp.485-487
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Symposium on Compound Semiconductors (ISCS) <37, 2010, Takamatsu>
English
Journal Article, Conference Paper
Fraunhofer IAF ()
InN; field effect transistor; epitaxy; simulation

Abstract
For high frequency field effect transistors, one of the promising approaches is to grow a very thin (<=10 nm) InN channel
pseudomorphically with low defect density between low lattice mismatched InGaN layers. The present work provides a comprehensive analysis of such structures by varying width of the InN well. Both experimental and theoretical approaches have been applied in order to optimize the InN potential well structure for a transistor operation.

: http://publica.fraunhofer.de/documents/N-155718.html