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Impact of stress on recombination of metal precipitates in silicon

 
: Gundel, P.; Schubert, M.C.; Heinz, F.D.; Kwapil, W.; Warta, W.; Martinez-Criado, G.; Reiche, M.; Weber, E.R.

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Fulltext urn:nbn:de:0011-n-1556756 (1.2 MByte PDF)
MD5 Fingerprint: b8dea4d873e293c19fcf62eefbdc2a41
Copyright AIP
Created on: 20.12.2014


Journal of applied physics 108 (2010), No.10, Art. 103707, 5 pp.
ISSN: 0021-8979
ISSN: 1089-7550
English
Journal Article, Electronic Publication
Fraunhofer ISE ()
Siliciummaterialcharakterisierung; Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Messtechnik und Produktionskontrolle; Feedstock; Kristallisation und Wafering; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung: Material; Zellen und Module

Abstract
Metals corrupt the performance of silicon solar cells severely. In this paper we investigate the recombination activity of metal precipitates and present a strong positive correlation between their recombination activity and the stress around them, independent of the type of metal forming the precipitate. This fundamental observation suggests that stress, together with the size of the precipitate, has a dominant effect on the recombination activity of metallic precipitates. We explain the recombination enhancing effect of stress near precipitates by the strong piezoresistance of silicon.

: http://publica.fraunhofer.de/documents/N-155675.html