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Strong electric field driven carrier transport non-linearities in n-type GaAs/AlGaAs superlattices

 
: Subacius, L.; Venckevicius, R.; Kasalynas, I.; Seliuta, D.; Valusis, G.; Schmidt, J.; Lisauskas, A.; Roskos, H.G.; Alekseev, K.; Köhler, K.

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Acta physica Polonica. A, General physics, physics of condensed matter, optics and quantum electronics, atomic and molecular physics, applied physics 119 (2011), No.2, pp.167-169
ISSN: 0587-4246
ISSN: 0587-4284
International Symposium Ultrafast Phenomena in Semiconductors (UFPS) <14, 2010, Vilnius>
English
Journal Article, Conference Paper, Electronic Publication
Fraunhofer IAF ()

Abstract
Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/Al(0.3)Ga(0.7)As superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.

: http://publica.fraunhofer.de/documents/N-154672.html