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Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs

: Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.


Microelectronics reliability 51 (2011), No.2, pp.224-228
ISSN: 0026-2714
Reliability of Compound Semiconductors Workshop (ROCS) <25, 2010, Portland/Or.>
Journal Article, Conference Paper
Fraunhofer IAF ()

The influence of the electric field on the reliability of AlGaN/GaN HEMTs is investigated in this work. We first demonstrate that at a certain electric field strength at the gate edge the gate characteristics of the device changes. This degradation is irreversible and is strongly influenced by growth parameter. A drain-voltage step-stress method is applied to the devices for investigating different layouts, and a consequent application enabled us to assign parameters mitigating the peak field strength and improve reliability.