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Simultaneous imaging of upset- and latchup-sensitive regions in a static RAM



Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 130 (1997), No.1-4, pp.478-485
ISSN: 0168-583X
International Conference on Nuclear Microprobe Technology and Applications <5, 1996, Santa Fe/N.Mex.>
Journal Article, Conference Paper
Fraunhofer INT ()
static RAM; upset detection; latchup detection; heavy ion microprobe; simultaneous imaging; upset sensitive region; latchup sensitive region; operating voltage dependence; secondary electron imaging; single event processes

Using the GSI heavy ion microprobe and a special hardware circuit for upset and latchup detection we have for the first time simultaneously imaged upset- and latchup-sensitive regions of a 2k*8 bit static RAM (HM 65162) for different LET values of the beam and various operating voltages. Additionally we have mapped the scanned area by secondary electron imaging and ion induced charge imaging to create a data set as comprehensive as possible for the description of single event processes.