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Electrical instability of a-Si:H TFTs fabricated by maskless laser-write lithography on a spherical surface

: Yoo, G.; Radtke, D.; Baek, G.; Zeitner, U.D.; Kanicki, J.


IEEE transactions on electron devices 58 (2011), No.1, pp.160-164
ISSN: 0018-9383
Journal Article
Fraunhofer IOF ()
amorphous silicon; a-Si; maskless laser-write lithography (LWL); nonplanar surface; thin-film transistor; TFT; threshold voltage shift

We fabricated and characterized hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with a channel length of 10 µm on both spherical and flat surfaces using maskless laser-write lithography (LWL). In addition to the electrical performance, the threshold voltage shift?Vth of the a-Si:H TFT under bias-temperature stress is investigated and discussed in comparison to a device fabricated on a flat surface. The obtained results show that the a-Si:H TFTs fabricated by LWL method on a curved surface are suitable for pixel switches and circuits, which are needed to realize image sensor arrays and/or displays on a nonplanar surface.