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Silicon carbide radiation detector for harsh environments

 
: Metzger, S.; Henschel, H.; Köhn, O.; Lennartz, W.

:
Postprint urn:nbn:de:0011-n-151642 (187 KByte PDF)
MD5 Fingerprint: f6cc1406c6bb46f8145c9aeb97a39db3
© 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 25.9.2010


IEEE Transactions on Nuclear Science 49 (2002), No.3, pp.1351-1355
ISSN: 0018-9499
European Conference on Radiation and its Effects on Components and Systems (RADECS) <6, 2001, Grenoble>
English
Journal Article, Conference Paper, Electronic Publication
Fraunhofer INT ()
commercial off-the-shelf SiC ultraviolet photodiodes; gamma dose rates; signal-to-noise ratio; radiation-induced current; Dark Current; proton irradiation; neutron irradiation; radiation hardness; neutron dose rate; neutron dose-rate meter; gamma dose-rate meter; proton dose-rate meter; SiC

Abstract
We used commercial off-the-shelf (COTS) silicon carbide (SiC) ultraviolet photodiodes for measuring gamma dose rates at high temperature. We tested them with Co-60 gamma dose rates between 0.03 mGy(Air)/s and 3 Gy(Air)/s. The diodes show excellent sensitivity, high signal-to-noise ratio (SNR), and good linearity. They were operated at temperatures up to 200 degrees C with negligible changes of the dark and the radiation-induced current. Gamma irradiation up to a total dose of 1080 kGy(Air), 32-MeV proton irradiations up to a fluence of 8.5 x 10/sup 12/ cm/sup -2/, and 14-MeV neutron irradiations up to 4.1 x 10/sup 12/ cm/sup -2/ demonstrate their radiation hardness. These results and the ability to measure the proton as well as the neutron dose rate after a calibration with Co-60 gammas show that COTS SiC diodes can be used as radiation detectors in harsh environments.

: http://publica.fraunhofer.de/documents/N-15164.html