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Dislocation conversion and propagation during homoepitaxial growth of 4H-SiC
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2010
Conference Paper
Titel
Dislocation conversion and propagation during homoepitaxial growth of 4H-SiC
Author(s)
Kallinger, B.
Thomas, B.
Polster, S.
Berwian, P.
Friedrich, J.
Hauptwerk
Silicon carbide and related materials 2009
Konferenz
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2009
DOI
10.4028/www.scientific.net/MSF.645-648.299
Language
English
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Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Tags
epitaxial growth
dislocation
x-ray topography
KOH etching