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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Dislocation conversion and propagation during homoepitaxial growth of 4H-SiC

 
: Kallinger, B.; Thomas, B.; Polster, S.; Berwian, P.; Friedrich, J.

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Bauer, A.J.; Friedrichs, P.; Krieger, M.; Pensl, G.; Rupp, R.; Seyller, T.:
Silicon carbide and related materials 2009 : Selected, peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nürnberg, Germany, October 11 - 16, 2009
Stafa-Zürich: Trans Tech Publications, 2010 (Materials Science Forum 645/648)
ISBN: 978-0-87849-279-4
ISBN: 0-87849-279-8
pp.299-302
International Conference on Silicon Carbide and Related Materials (ICSCRM) <13, 2009, Nürnberg>
English
Conference Paper
Fraunhofer IISB ()
epitaxial growth; dislocation; x-ray topography; KOH etching

: http://publica.fraunhofer.de/documents/N-151466.html