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Low-temperature direct bonding of borosilicate, fused silica, and functional coatings

: Eichler, M.; Michel, B.; Hennecke, P.; Gabriel, M.; Klages, C.-P.

Colinge, C. ; Electrochemical Society -ECS-:
Semiconductor Wafer Bonding 11. Science, Technology, and Applications : In honor of Ulrich Gösele; Presented in the symposium entitled "Semiconductor Wafer Bonding 11: Science, Technology, and Applications - in Honor of Ulrich Gösele" held during the 218th meeting of the Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010
Pennington, NJ: ECS, 2010 (ECS transactions 33.2010, Nr.4)
ISBN: 978-1-566-77823-7
ISBN: 978-1-60768-173-1
ISSN: 1938-5862
International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications <11, 2010, Las Vegas/Nev.>
Electrochemical Society (Meeting) <218, 2010, Las Vegas/Nev.>
Conference Paper
Fraunhofer IST ()

An experimental study of low-temperature bonding of plasma-treated borosilicate glass and fused silica wafers as well as silicon substrates carrying thin films of silicon dioxide, silicon nitride, silicon oxynitride, and indium tin oxide, respectively, is reported. Plasma process parameters were optimized in order to maximize bond energy. Surface energy measurements were carried out in situ during annealing, helping to understand the kinetics of the bonding process. Power spectral density measurements on debonded wafers support the idea of the strong impact of micro-contact formation on bonding kinetics.