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Impact of forming gas annealing on ZnO-TFTs

 
: Huang, J.; Krishna, U.R.; Lemberger, M.; Jank, M.P.M.; Ryssel, H.; Frey, L.

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Postprint urn:nbn:de:0011-n-1513331 (676 KByte PDF)
MD5 Fingerprint: 74164f47cf664ab1a93b41e4395e6f9f
© 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 28.1.2011


Tang, T.-A. ; Institute of Electrical and Electronics Engineers -IEEE-; Institute of Electrical and Electronics Engineers -IEEE-, Beijing Section; IEEE Electron Devices Society:
10th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2010. Proceedings. Vol.3 : Nov. 1- 4, 2010, Shanghai, China
New York, NY: IEEE, 2010
ISBN: 978-1-4244-5798-4
ISBN: 978-1-4244-5799-1
ISBN: 978-1-4244-5797-7
pp.1548-1550
International Conference on Solid-State and Integrated Circuit Technology (ICSICT) <10, 2010, Shanghai>
English
Conference Paper, Electronic Publication
Fraunhofer IISB ()
forming gas annealing; ZnO-TFTs

: http://publica.fraunhofer.de/documents/N-151333.html