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X-band high-power microstrip AlGaN/GaN HEMT amplifier MMICs

 
: Raay, F. van; Quay, R.; Kiefer, R.; Bronner, W.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Weimann, G.

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Microwave Symposium Digest, 2006. IEEE MTT-S International
New York, NY: IEEE, 2006
ISSN: 0149-645X
ISBN: 0-7803-9541-7
pp.1368-1371
International Microwave Symposium (IMS) <2006, San Francisco/Calif.>
English
Conference Paper
Fraunhofer IAF ()
GaN power amplifier; GaN-Leistungsverstärker; efficiency; Wirkungsgrad; MMIC; microstrip; Mikrostreifenleitung

Abstract
This work describes AlGaN/GaN power amplifier MMICs in microstrip line technology on s.i. SiC substrate for X-band frequencies with output power levels well beyond 15 W. A dual-stage design supplies 18 dB of gain at 10 GHz with a pulsed output power of 20 W at V-DS = 40 V. Further, a single-stage MMIC with 6 mm gate width provides a P-1dB of 14.5 W and a maximum output power of 22.4 W, also at 10 GHz.

: http://publica.fraunhofer.de/documents/N-150237.html