Plasmastempel und Verfahren zur Plasmabehandlung einer Oberflaeche

(B3) Die vorliegende Erfindung betrifft einen Plasmastempel mit zumindest einer Kavitaet, die zumindest eine Oeffnung, vor welcher ein zu behandelndes Substrat anordenbar ist, einen der Oeffnung gegenueber angeordneten dielektrischen Boden und eine zwischen der Oeffnung und dem Boden angeordnete, zumindest bereichsweise elektrisch leitfaehige Wand als erste Elektrode aufweist sowie mit einer zweiten Elektrode, welche auf einer der Kavitaet abgewandten Seite des Bodens angeordnet ist.

DE 102009035411 B3 UPAB: 20101104 NOVELTY - The plasma stamp with a cavity (5a, 5b, 5c), comprises an opening above which a substrate (1) to be treated is arranged, a dielectric base arranged opposite to the opening, a first flat conductive layer as first electrode (2), a first dielectric layer arranged over the first electrode as base (3), a second flat conductive layer arranged over the first dielectric layer as second electrode (4), and/or a second dielectric layer. The first electrode has a passage as cavity, which extends itself from an upper side of the first electrode to the lower side of the first electrode. DETAILED DESCRIPTION - The plasma stamp with a cavity (5a, 5b, 5c), comprises an opening above which a substrate (1) to be treated is arranged, a dielectric base arranged opposite to the opening, a first flat conductive layer as first electrode (2), a first dielectric layer arranged over the first electrode as base (3), a second flat conductive layer arranged over the first dielectric layer as second electrode (4), and/or a second dielectric layer. The first electrode has a passage as cavity, which extends itself from an upper side of the first electrode turned to the first dielectric layer, to the lower side of the first electrode so that the opening is formed in the lower side of the first electrode. The second dielectric layer is arranged between the first electrode and the first dielectric layer, where the passage extends itself from an upper side of the second dielectric layer turned to the first dielectric layer, to lower side of the first electrode. The second dielectric layer is directly arranged on the upper side of the first electrode. A gas conductive layer is arranged between the first electrode and the first dielectric layer, consists of porous material and is gas-permeably connected with the passage. The gas conductive layer is arranged directly on the upper side of the first electrode or the upper side of the dielectric layer, and/or the gas conductive layer is arranged directly under the first dielectric layer. The passage extends itself from the upper side of the gas conductive layer turned to the first dielectric layer, to the lower side of the first electrode. A third dielectric layer is arranged under the lower side of the first electrode, where the passage extends itself to the lower side of the third dielectric layer turned away the first electrode. A high voltage is applied between the first and second electrodes, where the first electrode is formed as mass. Gas is applied with pressure of less than or equal to 1.5 bar in the cavity or the gas is applied in the cavity with pressure. The cavity and/or the passage is cylindrically formed, where the first electrode is formed through cylindrical wall, and the cavity and/or the passage is formed in a rectangular-shaped manner. The diameter and/or an edge length of the cavity parallel to the base or to opening of the cavity and/or a depth of the cavity in direction vertical to the base or vertical to opening is less than or equal to 2 mm. The first electrode extends itself in a plain or in a three-dimensional surface, which is a cylindrical surface. An INDEPENDENT CLAIM is included for a method for plasma treatment of a surface. USE - Plasma stamp with a cavity useful for plasma treatment of a surface of a substrate. ADVANTAGE - The plasma stamp ensures simple and efficient plasma treatment of a surface of substrate with good quality.