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Shunt-Analysis of Epitaxial Silicon Thin-Film Solar Cells by Lock-In Thermography

 
: Bau, S.; Huljic, D.M.; Isenberg, W.; Rentsch, J.

:

IEEE Electron Devices Society:
29th IEEE Photovoltaic Specialists Conference 2002. Proceedings : May 20-24, 2002 Hyatt Regency New Orleans New Orleans, Louisiana
New York, NY: IEEE, 2002
ISBN: 0-7803-7471-1
pp.1335-1338
Photovoltaic Specialists Conference <29, 2002, New Orleans/La.>
English
Conference Paper
Fraunhofer ISE ()
Silziumsolarzellen; Dünnschichtsolarzelle; Shunt-Analyse; Si-Epitaxie; crystalline silicon solar cell; thin film solar cell; shunt analysis; epitaxtial solar cell; screen printing; industrial manufacturing technique; laboratory fabrication; grain boundary

Abstract
Lock-in thermography has been applied for shuntanalysis on epitaxial silicon thin-film solar cells. The solar cell material was made by epitaxial deposition of the base layer on highly doped monocrystalline (Czochralski) and multicrystalline silicon substrates in an APCVD-system. Solar cells were prepared in a laboratory-type and an industrial-type process. Characterization of the solar cells by infrared Lock-in thermography and microscopy revealed a clear correlation between shunts and epitaxial defects in case of the lab-type solar cells. Furthermore an increased concentration of shunts located under the emitter grid lines of the industrial-type solar cells compared to the lab-type solar cells was observed. The analysis by thermography thus gave insight into the quality of the epitaxial layers and into problems concerning a transfer of the solar cell process from laboratory to industrial scale manufacturing.

: http://publica.fraunhofer.de/documents/N-14863.html