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Deposition of diamond/beta-SiC gradient composite films by microwave plasma-assisted chemical vapor deposition

: Shi, Y.; Tan, M.; Jiang, X.


Journal of Materials Research 17 (2002), No.6, pp.1241-1243
ISSN: 0884-2914
ISSN: 2044-5326
Journal Article
Fraunhofer IST ()
microwave plasma-assisted chemical vapor deposition; diamond/ beta-SiC gradient composite film; compositional gradient; Gas Mixture; hydrogen; methane; tetramethylsilane; single-crystalline silicon wafer substrate; diamond nanoparticle; scanning electron microscopy; electron probe microanalysis; energy-dispersive x-ray analysis; TMS flow rate; compositional gradient; film growth process; tribological coating; adhesion

Mixed-phase diamond/beta-SiC composite films with compositional gradient were prepared by microwave plasma-assisted chemical vapor deposition using a gas mixture of hydrogen, methane and tetramethylsilane (TMS). Single-crystalline silicon wafers, pretreated with diamond nanoparticles before deposition, were used as substrates. The film characterization by scanning electron microscopy, electron probe microanalysis, and energy-dispersive x-ray analysis shows that the contents of diamond and silicon carbide in the films vary with TMS flow rate. Diamond/beta-SiC composite films with compositional gradients are achievable by varying the TMS flow rate during the film growth process.