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2002
Journal Article
Titel
Deposition of diamond/beta-SiC gradient composite films by microwave plasma-assisted chemical vapor deposition
Abstract
Mixed-phase diamond/beta-SiC composite films with compositional gradient were prepared by microwave plasma-assisted chemical vapor deposition using a gas mixture of hydrogen, methane and tetramethylsilane (TMS). Single-crystalline silicon wafers, pretreated with diamond nanoparticles before deposition, were used as substrates. The film characterization by scanning electron microscopy, electron probe microanalysis, and energy-dispersive x-ray analysis shows that the contents of diamond and silicon carbide in the films vary with TMS flow rate. Diamond/beta-SiC composite films with compositional gradients are achievable by varying the TMS flow rate during the film growth process.
Tags
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microwave plasma-assisted chemical vapor deposition
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diamond/ beta-SiC gradient composite film
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compositional gradient
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Gas Mixture
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hydrogen
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methane
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tetramethylsilane
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single-crystalline silicon wafer substrate
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diamond nanoparticle
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scanning electron microscopy
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electron probe microanalysis
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energy-dispersive x-ray analysis
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TMS flow rate
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compositional gradient
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film growth process
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tribological coating
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adhesion