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AlGaN/GaN HEMTs on SiC operating at 40 GHz

Betrieb von AlGaN/GaN HEMTs auf SiC bei 40 GHz
 
: Quay, R.; Kiefer, R.; Raay, F. van; Massler, H.; Ramberger, S.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.

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International Electron Devices Meeting 2002
Piscataway, NJ: IEEE, 2002
ISBN: 0-7803-7462-2
pp.673-676
International Electron Devices Meeting <48, 2002, San Francisco/Calif.>
English
Conference Paper
Fraunhofer IAF ()
GaN; AlGaN; wideband gap semiconductors; Halbleiter mit grosser Bandlücke; SiC; substrat; HEMT; high power; amplifier; Hochleistungsverstärker; low noise; Rauschen; Ka-Band; Millimeterwelle

Abstract
The operation of AlGaN/GaN HEMTs on SiC in the Ka-band is analyzed with respect to the achievable output power between 35 GHz and 40 GHz. 150 nm gate length AlGaN/GaN HEMTs are investigated by active load-pull measurements. Further, small-signal and noise analysis are performed with regard to the use at Ka-band and robust receiver applications.

: http://publica.fraunhofer.de/documents/N-14833.html