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High-density plasma deposited silicon nitride films for coating InGaAlAs high-power lasers

ECR-Plasma abgeschiedene Siliziumnitrid-Schichten zur Beschichtung von InGaAlAs Hochleistungslaser-Facetten
 
: Sah, R.E.; Rinner, F.; Kiefer, R.; Mikulla, M.; Weimann, G.

Mathad, G.S.; Allendorf, M.D.; Sah, R.E.; Yang, M. ; Electrochemical Society -ECS-:
Plasma processing XIV. Proceedings of the International Symposium
Pennington, NJ: ECS, 2002 (Electrochemical Society. Proceedings 17)
ISBN: 1-566-77341-5
pp.35-42
International Symposium on Plasma Processing <14, 2002, Philadelphia/Pa.>
English
Conference Paper
Fraunhofer IAF ()
silicon nitride film; Siliziumnitrid; optical coating; optische Schichten; high-power laser; Hochleistungslaser; life time; Lebensdauer; dielectric films; dielektrische Schichten

Abstract
Silicon nitride (SiN) films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) technique have been used as optical coatings for the emitting facet of InGaAs/AlGaAs high-power lasers. The films were deposited at 90 deg C from a mixture of Ar, N2 and SiH4 as precursors. The most important properties of the films are low intrinsic stress and a negligible hysteresis in stress upon thermal cycling. Pre-cleaning of the surface to be coated, and the stable low stress in the film used for coating have been found to be highly valuable for the reliability of InGaAs/AlGaAs high-power lasers.

: http://publica.fraunhofer.de/documents/N-14829.html