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Beam quality and linewidth enhancement factor of ridge-waveguide tapered diode lasers

Strahlqualität und Henryfaktor von Trapez-diodenlasern mit Rippenwellenleiter
: Kelemen, M.T.; Weber, J.; Rogg, J.; Rinner, F.; Mikulla, M.; Weimann, G.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 18th International Semiconductor Laser Conference 2002
Piscataway, NJ: IEEE, 2002
ISBN: 0-7803-7598-X
International Semiconductor Laser Conference (ISLC) <18, 2002, Garmisch-Partenkirchen>
Conference Paper
Fraunhofer IAF ()
high brightness; hohe Brillanz; high power; hohe Leistung; high-power diode laser; Hochleistungs-Diodenlaser; tapered laser; Trapezlaser; life time; Lebensdauer; AlGaAs-InGaAs; semiconductor; Halbleiter

Increasing the brightness of high-power diode lasers is one of the key topics in today's semiconductor laser development activities. When easy and low-cost fabrication is a further requirement, devices based on tapered gain sections are the most promising candidates. In order to optimize the brightness of these diode lasers, the dependence of the linewidth enhancement factor and of the beam quality on the device structure parameters was investigated.