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Near-diffraction-limited high power diode laser tunable from 895 to 960 nm

Beinahe beugungsbegrenzte Hochleistungsdiodenlaser durchstimmbar von 895 bis 960 nm
 
: Kelemen, M.T.; Rinner, F.; Rogg, J.; Kiefer, R.; Mikulla, M.; Weimann, G.

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IEEE Lasers and Electro-Optics Society:
LEOS 2002. Annual Meeting of the IEEE Lasers & Electro-Optics Society. Vol.1
Piscataway, NJ: IEEE, 2002
ISSN: 1092-8081
pp.95-96
IEEE Lasers and Electro-Optics Society (Annual Meeting) <15, 2002, Glasgow>
English
Conference Paper
Fraunhofer IAF ()
high brightness; hohe Brillanz; high power; hohe Leistung; high-power diode laser; Hochleistungs-Diodenlaser; tapered laser; Trapezlaser; life time; Lebensdauer; AlGaAs-InGaAs; semiconductor; Halbleiter

Abstract
An external-cavity diode laser including a ridge-waveguide tapered amplifier structure is demonstrated to emit more than 1 W cw. The wavelength is tunable over a 60 nm span centered at 935 nm. The beam quality parameter M2 remains below 1.8 for output powers of 1 W over the whole span.

: http://publica.fraunhofer.de/documents/N-14820.html