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Mask-topography-induced phase effects and wave aberrations in optical and extreme ultraviolet lithography

 
: Erdmann, A.; Shao, F.; Evanschitzky, P.; Fühner, T.

:

American Institute of Physics -AIP-, New York:
54th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, EIPBN 2010. Papers : 01 June 2010 - 04 June 2010, Anchorage / U.S.A
Woodbury, N.Y.: AIP, 2010 (Journal of vacuum science and technology. B, microelectronics and nanometers 28.2010, Nr.6)
ISSN: 1071-1023
pp.1071-1023
International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN) <54, 2010, Anchorage/Alas.>
English
Conference Paper, Journal Article
Fraunhofer IISB ()

Abstract
Rigorous electromagnetic field simulations are applied to investigate phase effects in the light diffraction from masks for advanced optical and extreme ultraviolet lithography. Analogies of these phase effects with wave aberrations of the projection lens and their impact on the lithographic process performance are discussed.

: http://publica.fraunhofer.de/documents/N-147464.html