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Modeling of mask diffraction and projection imaging for advanced optical and EUV lithography

: Erdmann, A.; Shao, F.; Agudelo, V.; Fühner, T.; Evanschitzky, P.


Journal of modern optics 58 (2011), No.5&6, pp.480-495
ISSN: 0950-0340
ISSN: 1362-3044
Journal Article
Fraunhofer IISB ()
image modeling; lithography simulation; rigorous diffraction modeling; mask topography

Lithographic masks are an important and increasingly complex part of systems for advanced optical and extreme ultraviolet (EUV) lithography. They introduce polarization and phase effects with a significant impact on the entire system performance. Rigorous electromagnetic field (EMF) modeling of the mask is indispensable for a predictive simulation of lithographic processes. This paper describes several alternative mask models and their integration into a lithography simulation framework. Several examples demonstrate the relevance of an accurate mask diffraction modeling for the prediction of the lithographic process performance.