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2010
Conference Paper
Titel
Deposition of ZnO thin films by magnetron sputtering of ceramic ZnO targets
Abstract
ZnO thin films have been deposited by sputtering ceramic targets of intrinsic ZnO in DC, pulsed DC and rf superimposed DC mode. In this work results are presented from the investigation of the optical and electrical thin film properties with respect to the fraction of superimposed rf power as well as with respect to the oxygen content of the sputter atmosphere. As the fraction of rf power increased both optical thin film properties and thin film resistivity showed similar characteristics as obtained by introducing additional oxygen gas to the sputtering process. Since the discharge voltage of an arc event remains high with values of up to few hundred volts it is very important to select a proper powering setup in order to minimize the risk of damaging the sputter target or generating particles. Depending on the desired application and thickness of the ZnO layer the powering mode may become an important parameter as charge carrier density and their mobility can be affected without change in the resistivity.