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Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes

: Erdmann, A.; Shao, F.; Fuhrmann, J.; Fiebach, A.; Patsis, G.P.; Trefonas, P.


Dusa, M.V. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.; Semiconductor Manufacturing Technology Consortium -SEMATECH-:
Optical microlithography XXIII : 23 - 25 February 2010, San Jose, California, United States; SPIE advanced lithography
Bellingham, WA: SPIE, 2010 (Proceedings of SPIE 7640)
ISBN: 978-0-8194-8054-5
Paper 76400B
Conference "Optical Microlithography" <23, 2010, San Jose/Calif.>
Conference Paper
Fraunhofer IISB ()
lithography simulation; double patterning; curing; freezing; resist modeling; resits interaction; wafer topography

This paper uses advanced modeling techniques to explore interactions between the two lithography processes in a litho-cure-etch process and to qualify their impact on the final resist profiles and process performance. Specifically, wafer topography effects due to different optical properties of involved photoresist materials, linewidth variations in the second lithography step due to partial protection of imperfectly cured resist, and acid/quencher diffusion effects between resist materials are investigated. The paper highlights the results of the simulation work package of the European MD3 project.