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Mask and wafer topography effects in optical and EUV-lithography

 
: Erdmann, A.; Shao, F.; Evanschitzky, P.; Fühner, T.

:

Wu, H. ; Electrochemical Society -ECS-:
China Semiconductor Technology International Conference, CSTIC 2010 : March 18 - March 19, 2010, Shanghai, China
Pennington, NJ: ECS, 2010 (ECS transactions 27, 1)
ISBN: 978-1-56677-806-0 (CD-ROM)
ISBN: 978-1-60768-156-4 (PDF)
ISSN: 1938-5862
pp.415-420
China Semiconductor Technology International Conference (CSTIC) <2010, Shanghai>
English
Conference Paper
Fraunhofer IISB ()
mask models; mask diffraction analysis; optical proximity correction; optical masks; EUV masks; wafer topography effects

Abstract
The detailed understanding and accurate modeling of light diffraction from (sub-) wavelength size features on lithographic masks and wafers becomes indispensable for the development and optimization of advanced lithographic processes. This is demonstrated by two examples: optical proximity correction (OPC) for optical/EUV masks and wafer topography induced line width variations in double patterning.

: http://publica.fraunhofer.de/documents/N-146064.html