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Modeling of exploration of reversible contrast enhacement layers for double exposure lithography

: Shao, F.; Cooper, G.D.; Chen, Z.; Erdmann, A.


Dusa, M.V. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.; Semiconductor Manufacturing Technology Consortium -SEMATECH-:
Optical microlithography XXIII : 23 - 25 February 2010, San Jose, California, United States; SPIE advanced lithography
Bellingham, WA: SPIE, 2010 (Proceedings of SPIE 7640)
ISBN: 978-0-8194-8054-5
Paper 76400J
Conference "Optical Microlithography" <23, 2010, San Jose/Calif.>
Conference Paper
Fraunhofer IISB ()
lithography simulation; double exposure; reversible contrast enhancement layer; optical nonlinearity

This paper discusses the modeling of reversible contrast enhacement layers (RCEL)for advanced optical lithogrpahy. An efficient implementation of the Waveguide method is employed to investigate the process capability of RCEL and to identify the most appropriate material and exposure parameters. It is demonstrated that the consideration of near field diffraction effects and of bleaching dynamics is important to achieve correct results. A large refractive index of the resist and the RCEL improves the achievable lithographic performance. It is shown that RCEL layers can be used to enhance the performance of a NA=0.6 scanner to create a high contrast images with a pitch of 80nm.