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Lateral drift-field photodiode for low noise, high-speed, large photoactive-area CMOS imaging applications

: Durini, D.; Spickermann, A.; Mahdi, R.; Brockherde, W.; Vogt, H.; Grabmaier, A.; Hosticka, B.J.

Preprint urn:nbn:de:0011-n-1459339 (557 KByte PDF)
MD5 Fingerprint: f20b88f702ba9a21b115eb4a0e0baf1c
Created on: 29.8.2012

Andricek, L.:
New Developments in Radiation Detectors. 11th European Symposium on Semiconductor Detectors 2009. Proceedings : Wildbad Kreuth, Bavaria, Germany, 07-11 June 2009
New York: Elsevier Science, 2010 (Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment 624.2010, Nr.2)
ISSN: 0168-9002
European Symposium on Semiconductor Detectors <11, 2009, Wildbad Kreuth>
Conference Paper, Journal Article, Electronic Publication
Fraunhofer IMS ()
CMOS imaging; Lateral Drift-Field Photodetector (LDPD); high speed imaging; large pixel; low noise

In this work a theoretical concept and simulations are presented for a novel lateraldrift-field photodetector pixel to be fabricated in a 0.35 mm CMOS process. The proposed pixel consists of a specially designed n-well with a non-uniform lateral doping profile that follows a square-root spatial dependence. ''Buried'' MOS capacitor-based collection gate, a transfer-gate, and an n-type MOSFET source/drain n+ floating-diffusion serve to realize a non-destructive readout. The pixel readou tis performed using an in-pixel source-follower pixel buffer configuration followed by an output amplifier featuring correlated double-sampling. The concentration gradient formed in the n-well employs a single extra implantation step in the 0.35 mm CMOS process mentioned and requires only a single extra mask. It generates an electrostatic potential gradient, i.e. alateral drift-field, in the photoactive area of the pixel which enables high charge transfer speed and low image-lag. According to the simulation results presented, charge transfer times of less than 3 ns are to be expected.