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Optical investigation of the BGaP/GaP/Si material system

 
: Baeumler, M.; Rogowsky, S.; Wolfer, M.; Kirste, L.; Ostendorf, R.; Wagner, J.; Liebich, S.; Kunert, B.; Stolz, W.

Pavlidis, D.:
EXMATEC 2010, 10th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies : May 19-21, 2010, Darmstadt/Seeheim, Germany
Darmstadt/Seeheim, 2010
pp.103-104
International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC) <10, 2010, Darmstadt>
English
Conference Paper
Fraunhofer IAF ()

Abstract
The BGaAsP/GaP material system has lately gained interest for monolithic integration of III/V-based diode lasers in Si-based micro- und nano-electronic circuits. The design of efficient laser structures requires the knowledge of the band structure and of the optical properties - such as band-gap energies and refractive index which are both composition dependent. The boron content of the present MOVPE grown BGaP layers was determined by X-ray diffraction and Raman spectroscopy. Spectroscopic ellipsometry was used to study the dielectric function of pseudomorphically strained B(x)Ga(1-x)P grown on Si. Characteristic differences in the dielectric function spectra will be discussed.

: http://publica.fraunhofer.de/documents/N-145712.html